august 2011 doc id 18326 rev 2 1/10 10 STN9260 high voltage fast-switching pnp power transistor features high voltage capability fast switching speed applications lighting switch mode power supply description this device is a high voltage fast-switching pnp power transistor. it is manufactured using high voltage multi epitaxial planar technology for high switching speeds and m edium voltage capability. it uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide rbsoa. the device is designed for use in lighting applications and low cost switch-mode power supplies. i figure 1. internal schematic diagram sot-223 1 2 4 3 table 1. device summary part number marking package packaging STN9260 n9260 sot-223 tape and reel www.st.com
electrical ratings STN9260 2/10 doc id 18326 rev 2 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) -600 v v ceo collector-emitter voltage (i b = 0) -600 v v ebo emitter-base voltage (i c = 0) -7 v i c collector current -0.5 a i cm collector peak current (t p < 5 ms) -1 a i b base current -0.25 a i bm base peak current (t p < 5 ms) -0.5 a p tot total dissipation at t a = 25 c 1.6 w t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thja thermal resistance ju nction-ambient (1) _ max 1. device mounted on pcb area of 1 cm2. 78 c/w
STN9260 electrical characteristics doc id 18326 rev 2 3/10 2 electrical characteristics t case = 25 c unless otherwise specified. table 4. electrical characteristics symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = -600 v -10 a i ebo emitter cut-off current (i c = 0) v eb = -7 v -1 a v ce(sus) (1) 1. pulse test: pulse duration 300 s, duty cycle 2 %. collector-emitter sustaining voltage (i b = 0) i c = -10 ma -600 v v ce(sat) (1) collector-emitter saturation voltage i c = -100 ma i b = -10 ma -1 v v be(sat) (1) base-emitter saturation voltage i c = -100 ma i b = -10 ma -1 v h fe dc current gain i c = -10 ma v ce = -5 v i c = -20 ma v ce = -5 v 50 140 t r t s t f resistive load rise time storage time fall time v cc =-200 v, i c =-0.1 a i b1 =-10 ma, i b2 =20 ma t p =30 s 200 3.2 150 ns s ns
electrical characteristics STN9260 4/10 doc id 18326 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. derating curve ! - v ) c ; ! = 6 c e ; 6 = ) c - a x ) c - a x # o n t
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